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Growth of bulk 2H–SiC single crystals in a C–Li–Si ternary melt system was successful. The growth of 2H–SiC must be conducted at lower temperatures than that of other SiC poly-types. The lithium flux solved this problem, as it is usable for growth under 1000 °C due to its low melting temperature. Success in the growth of 2H–SiC single crystals in this study may unlock the potential for realizing high-performance...
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