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The traps in an AlGaN/GaN metal-insulator-silicon-high-electronmobility- transistor on silicon are investigated by analysing the random-telegraph-signal (RTS) noise in the drain current. Two different types of RTS noise due to the traps at the gate-oxide and AlGaN have been observed in this reported work. Through the analysis of the two RTS noises, the presences of the two trap types are verified...
A 132-160 GHz low-noise amplifier (LNA) in 0.13 μm SiGe BiCMOS technology is presented. The gain-boosting technique and 3D grounded-shielding structures have been employed to achieve higher gain with lower power consumption and silicon occupation. The experimental results show that the LNA with a chip area of 400 ?? 900 μm achieves gain of 21 dB with a 3 dB bandwidth of 28 GHz and noise figure of...
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