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Ab initio calculations of the electronic structure and band gap of Eu-doped LaSi3N5 were carried out using HSE06 functional. The calculated band gaps of Eu3+- and Eu2+-doped LaSi3N5 are 0.68eV and 3.28eV respectively, with electronic transition p→4f for the former and 4f→5d for the latter system. In the case of Eu2+-doped LaSi3N5 the charge balance caused by La3+/Eu2+ substitution was compensated...
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