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We fabricated an enhancement-mode thin film transistor (TFT) using ZnO as an active channel layer deposited by radio frequency (rf) magnetron sputtering. The NH 3 plasma passivation was performed in order to improve the electrical properties of the ZnO TFTs. We observed that the NH 3 plasma treated ZnO TFTs revealed improved device performances, which include the field effect mobility...
Monocrystalline ZnO thin films on p-GaN/sapphire (0001) substrate were grown by single step hydrothermal technique at 90 °C. ZnO thin films were grown in aqueous solution of zinc nitrate and ammonium hydroxide. The X-ray diffraction, scanning electron microscopy and room temperature photoluminescence analysis were carried out to characterize structural, morphological and optical properties of the...
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