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Ultra thin Silicon films of Silicon-on-Insulator technology are metastable and thus cannot be submitted to high temperature treatments that may roughen or disrupt the film during the set of technological steps required for device fabrication. This paper concerns the development of an efficient low temperature cleaning process of Si and SiGe surfaces that enables a subsequent good-quality epitaxy of...
Square surface defects evolving in a triangular shape were observed on Si(001) as the consequence of long annealing step at very high temperature and in slightly oxidizing conditions. The evolution of the size and shape of these defects were studied as a function of time, of surface misorientation and of oxygen/neutral gas ratio. The association of the Burton Cabrera and Frank (BCF) model developed...
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