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A crescent-shape mesa-substrate buried-heterostructure (CMSB) InGaAsP laser (? = 1.3 ?m) was grown by a single-step liquid phase epitaxy. Threshold current as low as 25 mA with 200 ?m cavity length under pulse operation and linear light/current characteristics up to five times Ith were obtained. T0 as high as 97?C was achieved for the first time for quaternary lasers. High output power, ~15 mW/facet,...
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