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We propose a new concept for the reduction of impurity scattering in remotely doped GaAs single quantum wells by using heavy-mass X-electrons in the short-period AlAs GaAs superlattice barriers which smooth the potential fluctuations of the ionized Si dopants. Electron mobilities as high as 120 m 2 /V · s and electron densities of 1.6 × 10 16 m −2 are obtained in 10 nm GaAs...
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