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We investigated the influence of the wire-like Si dopant incorporation on the photoluminescence (PL) properties of samples with a thin GaAs cap layer. The near band gap PL has been found to be dominated by exciton recombination in the 10 nm cap layers. For samples grown on vicinal GaAs(001) surfaces under conditions favourable for the wire-like Si incorporation, a considerable enhancement of the...
The spatial arrangement of electric-field domains in heavily doped GaAs-AlAs superlattices is investigated by cathodoluminescence (CL) techniques. In depth-resolved CL studies, the excitation depth from the top is varied by changing the excitation energy of the electron beam. The relative intensity of the high-field domain CL peak increases with increasing excitation energy. In imaging experiments,...
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