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The GaSb-on-GaAs growth was optimized for the fabrication of metal-oxide-semiconductor (MOS) capacitors (Caps) with low interface state trap density (D it ) using in-situ deposited amorphous silicon (a-Si) interface passivation layer (IPL) and high-k oxides. The best top surface with the average roughness R a =0.37nm and with spiral type “step-flow” growth mode was observed in the...
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