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The possible benefits of phosphorus-based gettering applied to crystalline silicon wafers have been evaluated. The gettering process is achieved by forming porous silicon (PS) layers on both sides of the Si wafers. The PS layers were formed by the stain-etching technique, and phosphorus diffusion using liquid POCl 3 -based source was done on both sides of the Si wafer. The realized phosphorus/PS/Si/PS/phosphorus...
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