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Dielectric TiO 2 thin films were fabricated on p-(100) Si substrates by arc ion plating. A pulsed substrate bias ranging from 0V to −900V was applied to investigate the effect of pulsed bias on phase structure and growth of the films. Phase, microstructure, and growth morphology of TiO 2 films prepared at different bias voltages were evaluated with grazing incident x-ray diffraction...
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