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A high temperature silicon on insulator pressure sensor utilising a Ti/TiN/Pt/Au electrode is presented for improving the thermal stability of ohmic contacts, which can work stably at high temperatures of up to 500°C. To analyse the characteristics of the electrode at high temperatures, a special test structure is measured using the linear transmission line method and Auger electron spectroscopy....
High temperature pressure sensors have been widely applied in modern industry. However, the performance of the pressure sensor is largely dependent on the thermal stability of ohmic contact electrode. This paper presents a TiSi2/Ti/TiN/Pt/Au multilayer electrode. Linear transmission line method (TLM) and voltmeter-ammeter method have been used to measure the electronic properties of the electrode...
Atmospheric-pressure plasma jet (APPJ) has attracted tremendous attention in the past decade mainly due to its low cost and flexibility without the use of expensive vacuum equipment. It has found numerous applications such as surface cleaning, surface modification, thin-film deposition and recently biomedical applications that may include sterilization, blood coagulation, cell growth enhancement and...
The lithiation mechanism of Mg2Si electrode has been investigated using the first-principles calculations within the density functional theory. The detailed reaction paths of lithium insertion into Mg2Si were analyzed, and the calculated results indicate that Li1Mg2Si is just the critical phase, which the substitution of Li and extrusion of Mg begin to happen. The relative volume changes for the electrode...
In this paper, periodic poling localized in the body of Ti in-diffused ridge waveguides (Ti:PPLN) on X-cut LiNbO3 (LN) is reported and the high waveguide quality by efficient second harmonic generation (SHG) is also demonstrated.
Mach-Zehnder type interferometric (MZI) modulators based on lithium niobate (LiNbO3) are key components in today's optical communication systems. Despite their excellent properties, future optical networks will require devices of lower drive voltage and even higher bandwidth capability (40 GHz or higher). In particular, values of Vpi les2 V would allow using much cheaper driving electronics. This...
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