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This paper reports the high mobility InN film grown by MOCVD with GaN buffer layer on sapphire substrates. Different buffer layers are used in our experiments. These buffer layers included the annealing sapphire substrate, the low-temperature GaN layer (LT-GaN), the high-temperature GaN layer (HT-GaN) and the complex buffer layer with HT-GaN on LT-GaN. The crystalline quality of the InN film is sensitive...
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