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This paper presents an exhaustive description of a field programmable gate-array (FPGA) based set-up for envelope tracking and dynamic biasing of RF power amplifiers (PA). The system includes digital adaptive predistortion (DAPD) and gain compensation deployed in a FPGA device. For testing purposes a GaN HEMT RF PA operating at 3.5 GHz was considered. Preliminary experimental results are provided...
In this paper, the particular impact of switching device ON resistance variation with drain supply voltage, Ron(VDD), on polar transmitter distortion is considered. Pulsed I/V measurement results over a GaN HEMT are used to predict the deviation in the Vdd-to-AM modulation profile. System-level calculations, in the presence of other nonidealities, allow the evaluation of the relative contribution...
In this paper, a novel technique to study the evolution of the electronic mobility in GaAs microwave MESFET's devices versus both, frequency and bias condition is presented. The technique employs scattering parameters measurement over the frequency band of interest along with DC and pulsed transconductance and output conductance device measurements. The examination of the presented results shows the...
In this paper, an experimental GaN HEMT grown on sapphire substrate is employed for designing and testing a resistive mixer. Based on an appropriate characterization of the transistor output conductance and its higher order derivatives, the gate-to-source bias voltage may be selected for optimizing the conversion loss, while the use of a small drain-to-source bias value helps improving its linearity...
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