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The effects of neutron irradiation on the electrical properties of highly doped 4H SiC were studied. The material was fabricated into standard Hall bars for characterization of the material’s resistivity, free-carrier concentration and electron Hall mobility as a function of 1MeV equivalent neutron fluence in SiC (Φ1MeV,SiCEq). The post-irradiation effects of low temperature (175°C) annealing on the...
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