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We have performed time-resolved photoluminescence (PL) spectroscopy for ZnO thin films with thicknesses of 90, 460, and 2800nm under intense excitation condition. We clearly observed the P emission due to inelastic exciton–exciton scattering. It was found that, in the 460- and 2800-nm thick samples, the decay time of the P emission considerably depends on the detection energy inversely proportional...
We have investigated the photoluminescence (PL) dynamics of a ZnO thin film under intense excitation conditions at 10 K. In the ZnO thin film, a PL band due to exciton‐exciton scattering, the so‐called P emission, appears. The optical‐Kerr‐gating method with the ultrashort gating time of 0.6 ps enabled us to obtain precise information of the temporal profiles including the peak energy, the bandwidth...
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