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RF CMOS technology provides a platform for the production of analog, digital and RF circuits on a single chip for futuristic high-level integration. This facilitates the need for a robust compact model for RF FinFETs to study the circuits in a precise and convenient way. In this paper, we have characterized 14-nm N-channel bulk FinFETs by performing two-port S-parameter measurements. Further, BSIM-CMG...
Emerging market of RFSOI applications has motivated us to come up with the robust compact model for RFSOI MOSFETs. In this work, we have validated the RF capabilities of BSIM-IMG model which is the latest industry standard compact model for independent double gate MOSFETs. Results are validated with the experimental S-parameter data measured. Model shows good agreement for different biases over wide...
In the present paper the single mode time independent nonlinear analysis of a second harmonic gyroklystron amplifier has been carried out for its beam-wave interaction behavior study. An experimental two-cavity 35GHz gyroklystron amplifier reported in the literature had used to validate the developed analytical approach. The beam-wave interaction behavior and performance evaluation studies of the...
In this letter, we present a thermal network extraction methodology to characterize self-heating effect using two-port RF measurements. We show the technique of determining isothermal condition using only the self-heating (thermal) dominated range of the spectrum. We use a self-consistent self-heating extraction scheme using both the real and imaginary parts of drain port admittance parameters. Appropriate...
In this paper the study of electron bunching in the output cavity of gyroklystron has been carried out to optimize the output efficiency of gyroklystron by numerically solving the coupled equations obtained from nonlinear analysis, describing the strong interaction between the beam and RF fields in the output cavity of the gyroklystron. The generalized results obtained here can be applied to optimize...
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