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Characteristics of Ga-doped ZnO (GZO) transparent conductive oxide films have been investigated based on the absorption behavior and chemical states of dopant Ga in the film. GZO samples were prepared by pulsed DC magnetron sputtering at 423K by varying the sputtering power from 0.6 to 2.4kW and the Ga 2 O 3 concentration in the targets from 0.6 to 5.7wt%. Absorption spectra of the...
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