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Together with high-κ dielectric films, metal gate electrodes have to be employed in advanced CMOS technologies. The metal gate material should be carefully selected with respect to work function, stability of metal-dielectric stack and compatibility with the CMOS process. In our investigation, Ru, RuO 2 and SrRuO 3 gate electrodes grown on thermal SiO 2 , atomic-layer deposition...
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