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A GaAs/AlGaAs vertical-cavity surface-emitting laser with resonant periodic gain has been grown by metal-organic chemical vapour deposition. The as-grown structure exhibits an optically pumped CW threshold below 15 mW at 300 K and a single-ended power efficiency up to 45%. Fundamental Gaussian and higher-order modes are observed with spectral widths (FWHM) as low as 0.27 AA.<<ETX>>
The first all-semiconductor GaAs/AlGaAs vertical cavity laser incorporating wavelength resonant periodic gain layers grown by metalorganic chemical vapour deposition is reported. The optically pumped structure exhibits a threshold of 0.5 nJ at 852 nm for 720 nm pulsed excitation and energy conversion efficiencies up to approximately 6%. The output linewidth is <or=0.4 nm FWHM with single longitudinal...
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