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In this report, the optical properties of the InGaAsN triple quantum wells were significantly improved by applying TMSb surfactant flow before the growth of InGaAsN layer. The PL intensities of the Sb-treated samples were improved by around two times and the line width of the emission spectrum was reduced from 263.6 to 67meV as well, while maintaining the peak at 1265nm. The surfactant effects of...
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