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Current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Co-based Heusler alloys have recently drawn considerable attention due to their potential application as read sensors for ultrahigh density magnetic recording.1,2,3,4 With a non-magnetic Ag spacer layer, the resistance change-area product (ΔRA) of epitaxial pseudo spin valves (PSVs) on single crystalline (001) MgO substrates...
A Nb3Al strand, produced by the ldquorapid-heating, quenching and transformation annealing (RHQT)rdquo process, has been developed in collaboration between JAEA and NIMS aiming at application to the conductor in a fusion DEMO reactor. A detailed description of critical current characteristics of the Nb3Al RHQT strand may assist in predicting accurate conductor performance. Calculations of the critical...
Annealing of thin copolymer films of vinylidene fluoride (VDF) and trifluoroethylene (TrFE) causes a strong increase in grain size as well as in crystallinity. It is known from AFM topographic images that flat-on lamella with diameters of up to 100 mum grow when thin films are annealed at temperatures around 140degC for several hours. To examine the orientation and the polarization state of the lamella,...
Piezoelectric response force microscopy, PFM, is a kind of SPM technique. It measures the change of the position of surface in accordance with the applied voltage, giving local piezoelectric activity. This method is widely applied to ferroelectric ceramics as well as to ferroelectric polymers. We used this method to study the dynamics of polarization reversal in thin films of VDF/TrFE copolymer.
We have studied THz detection performance of low-temperature-grown GaAs (LT-GaAs) photoconductive switches gated with 1560-nm-optical pulses. LT-GaAs is annealed in the range of 500-600degC. Although the sample annealed at 600degC is most sensitive at frequencies below 1 THz, that annealed at 550degC is superior to others at higher frequencies than 1 THz.
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