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In this paper, we present a monolithic vertical integration of a 850nm wavelength AlGaAs/GaAs-based vertical-cavity surface-emitting laser (VCSEL) and a 810nm wavelength AlGaAs/GaAs-based resonant cavity enhanced photodetector(RCE-PD). The receiving and transmitting of optical signals on two different wavelengths can be realized simultaneously by the single transceiving chip. Simulations show that,...
In this paper, an integrated optoelectronic chip, which can transmit optical signal at 849.2nm and receive optical signal at 803nm, is proposed. It is constructed by integrating a VCSEL unit above a PIN-PD unit. Analysis show that, the VCSEL unit has a threshold current around 1mA and a maximum output power around 1.2mW at 849.2nm, the PIN-PD unit has a highest absorption quantum efficiency above...
A vertically integrated device composed of Vertical-Cavity Surface-Emitting Laser (VCSEL) unit and Resonant Cavity Enhanced Photodiode (RCE-PD) unit is proposed, which has huge potential application perspectives for optical interconnects. The performance of the integrated device and the interaction of its two composing units are analyzed based on different structure optimization. As optimized, its...
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