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The purpose of this paper is to show the role of the sidewall barrier on the nucleation / growth of electromigration induced voids in Cu interconnects. A comparison is made between an anisotropic PVD process and a conformal CVD process. Standard electromigration (EM) and scanning electron microscopy (SEM) give a clear picture of the failure mechanisms. SEM shows the steps of void growth in 120 nm...
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