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The experimental characterization of single barrier heterostructure thermionic cooling devices at cryogenic temperatures is reported. The device studied was a cylindrical InGaAs microrefrigerator, in which the active layer was a 1 μm thick In0.527Al0.218Ga0.255As heterostructure barrier with n-type doping concentration of 6.68 × 1016 cm−3 and an In0.53Ga0.47As emitter/collector of 5 × 1018 cm−3n-doping...
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