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Diamond films have been deposited on (100) Si substrates through carburization, nucleation and growth steps using a microwave plasma-enhanced chemical vapor deposition system. The surface morphologies of the films were investigated as a function of the carburization time. It is likely that the ball-like agglomerates observed on the carburized surface act as nucleation sites for diamond. We also found...
The growth of a diamond film with {100}-oriented texture on Si substrates (1 x 1 cm 2 ) has been achieved by a three-step process (carburization -> nucleation -> growth) in a microwave-plasma-enhanced chemical vapor deposition (MPECVD) system. We employed a cyclic technique in the nucleation step together with the various etching time intervals in the cyclic process. The properties of...
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