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The hydrogenated poly-silicon germanium (poly-SiGe:H) epitaxial film has been investigated by gold induced lateral crystallization (Au-ILC) technology on a-SiGe:H layer at 10-hr 350degC annealing temperature and 60-sccm hydrogen (H2) content. By this optimal condition, the growth rate by Au induced can be as large as 15.9 mum/hr. Due to low annealing temperature treatment (les 400degC) and large growth...
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