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Fundamental material interactions as pertinent to nano-scale copper interconnects were studied for CVD Co with a variety of micro-analytical techniques. Native Co oxide grew rapidly within a few hours (XPS). Incorporation of oxygen and carbon in the CVD Co films (by AES and SIMS) depended on underlying materials, such as Ta, TaN, or Ru. Copper film texture (by XRD) and agglomeration resistance (by...
Selective CVD Ru cap deposition process has been developed for BEOL Cu/low-k integration. Selectivity of CVD Ru deposition between Cu and dielectrics is investigated. Electrical performance, electromigration (EM) lifetime, voltage ramp (I-V), and time-dependent-dielectric-breakdown (TDDB) are also characterized for Cu interconnects capped with CVD Ru. This selective CVD Ru cap process is a good candidate...
The effect of Cu microstructure on electromigration (EM) has been investigated. A variation in the Cu grain size distributions between wafers was achieved by adjusting the wafer annealing process step after Cu electroplating and before Cu chemical mechanical polishing. Void growth morphology was observed by in-situ and ex-situ scanning electron microscope (SEM) techniques. The Cu lifetime and mass...
Thin film characterization, electrical performance, and preliminary reliability of physical vapor-deposited (PVD) TaN/chemical vapor-deposited (CVD) Ru bilayer were carried out to evaluate its feasibility as a liner layer for back-end of line (BEOL) Cu-low k integration. Adhesion and barrier strength were studied using 4-point bend, X-ray diffraction (XRD), and triangular voltage sweep (TVS) techniques...
A processing sequence to produce a multilevel Cu/polyimide structure which is stable in a corrosive environment is described. Using a combination of dry etching and chemical-mechanical polishing, a fully planarized Cu/polyimide wiring structure was obtained. This technology has been successfully applied to the fabrication of 64 kb complementary metal-oxide-semiconductor static random access memory...
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