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We have investigated the crystallization and structuring of amorphous Ge (a-Ge) films deposited on crystalline GaAs (100) substrates by nanosecond laser pulses. Epitaxial Ge films on GaAs are obtained for laser fluencies that completely melt the Ge film, but not the substrate. Higher fluencies lead to a partial melting of the substrate and to the formation of a (GaAs) 1−x Ge 2x epitaxial...
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