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A graded buffer layer is needed in order to grow III–V/SiGe on silicon substrate because of the lattice mismatch. In this work, optical absorption in the graded buffer layer is quantified by measuring the transmittances. We demonstrate a 7 µm graded buffer layer with Ge composition from 0% to 82% is equivalent to a 2 µm SiGe film with 82% Ge composition in terms of optical absorption. A SiGe solar...
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