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This paper investigates the impact of temperature on the DC and AC performance of double gate junctionless field effect transistor (DG-JLFET) with vertical Gaussian doping profile (VGDP) in channel and uniformly doped (UDP) DG-JLFET for the temperature ranging from 200K to 400K using 2D numerical simulation. It is observed that the off state current decreases with temperature for both UDP and GDP...
This paper presents, a simulation based study of Double Gate Junctionless Field Effect Transistor (DG-JLFETs) with Vertical Gaussian Doping profile. The proposed device structure improves the ON to OFF drain current ratio (by ≈ 105), threshold voltage roll off (by ≈ 30 mV), Drain Induced Barrier Lowering (DIBL) (by ≈ 29 mV/V) and Sub-threshold swing (by ≈ 6 mV/dec at straggle parameter σ ≈ 3.75 nm...
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