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Strained Si HBTs have been demonstrated for the first time with a maximum current gain (beta) of 3700 using a relaxed Si0.85Ge0.15 virtual substrate, Si0.7Ge0.3 base and strained Si emitter. This represents 10times and 27times larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si...
We present a comprehensive study of biaxially strained (up to ~3 GPa stress) Si nMOSFETs down to 80 nm gatelength. Well behaved 80 nm devices with expected strain-induced electrical enhancement were demonstrated. Special emphasis was put on investigation of substrate junction leakage and source to drain leakage. In-situ doped wells and channel profiles demonstrated superior substrate junction leakage...
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