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An overview of our recent work on ultrathin (<100 Å) films of metal oxides deposited on silicon for advanced gate dielectrics applications will be presented. Data on ultrathin Al 2 O 3 , ZrO 2 , HfO 2 , and Y 2 O 3 will be shown to illustrate the complex processing, integration and device-related issues for high dielectric constant ('high-K') materials...
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