The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper light-induced carriers in Al/PS/p-Si/Al structure are presented. Nyquist plots and admittance as a function of frequency and wavelengths were in detail analyzed. Admittance spectroscopy is a power tool in the study of semiconductors. This diagnostic technique gives information about uncompensated conductance and capacitance of single and multilayer structures. Moreover we can find out...
In this work, we investigated electrical properties of Al/PS/p-Si structures. Admittance spectroscopy is one of the major semiconductor diagnostic techniques. Frequency, voltage and wavelengths dependencies of admittance will be analyzed in detail. It will be useful for better understanding of fundamental electrical properties of porous silicon.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.