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The new wide-bandgap oxide semiconductor, gallium oxide (Ga2O3), has gained attraction as a promising candidate for power device applications because of its excellent material properties and suitability for mass production. The Baliga's figure of merit of Ga2O3 is expected to be much larger than those of SiC and GaN due primarily to Ga2O3's extremely large bandgap of 4.5∼4.9 eV, which will enable...
Dilute-nitride alloy InPN films have been grown by metalorganic vapor phase epitaxy (MOVPE), and the N incorporation behavior is investigated by varying the major growth parameters. The grown-surface morphologies show that the 2-dimensional (2D) growth with atomically flat surfaces is obtained at 460-500°C with relatively high P supplies. The XRD analyses show that the N incorporation increases for...
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