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Two different a‐IGZO gate driving circuits (GOA) which used long channel length (GOA_A) and STT (GOA_B) structures were designed and compared. GOA_B shows better performance than that of GOA_A, while the Vth of T53 in GOA_B circuit would shift to a very positive voltage after life test. The large channel width size ratio between T53 and T54 would bring about bigger Vds voltage of T53 which induces...
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