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Copper indium diselenide (CuInSe 2 ) was prepared by direct reaction of high purity elemental Copper, Indium and Selenium. CuInSe 2 thin films were prepared on well-cleaned glass substrates by a hot wall deposition technique. The X-ray diffraction studies revealed that all the deposited films are poly crystalline in nature, single phase and exhibit chalcopyrite structure. The crystallites...
Copper indium diselenide (CuInSe 2 ) compound was prepared by direct reaction of high-purity elemental copper, indium and selenium. CuInSe 2 thin films were deposited onto well-cleaned glass substrates by a hot wall deposition technique using quartz tubes of different lengths (0.05, 0.07, 0.09, 0.11 and 0.13m). X-ray diffraction studies revealed that all the deposited films are polycrystalline...
ZnSe thin films with different thicknesses are deposited onto glass substrates under a vacuum of 4×10 −5 mbar by vacuum evaporation. Rutherford backscattering spectrometry is used to identify the composition of the deposited films. The composition of the deposited films is found to be nearly stoichiometric. The X-ray diffractogram reveals a cubic structure with preferential orientation along...
Thin films of Cd 0.8 Zn 0.2 Te/Si structures were prepared by vacuum evaporation technique. The electrical properties such as activation energy, barrier height, and transport mechanism along with the capacitance-voltage characteristics are analyzed. The zero field activation energy calculated from the saturation current density with the inverse absolute temperature...
Polycrystalline Cd 0.96 Zn 0.04 Te thin films are deposited onto glass substrates (Corning 7059) kept at room temperature by vacuum evaporation. The films exhibit zinc blende structure with predominant (111) orientation. The rms roughness of the films evaluated by atomic force microscope is 3.7nm. The band gap energy of the films measured by optical transmittance...
Cd 0.96 Zn 0.04 Te thin films were prepared by vacuum evaporation onto glass substrates kept at room temperature. X-ray diffraction (XRD) studies revealed that the as-deposited films have zinc blende structure with preferential (111) orientation. Raman peak of the as-deposited film appeared between 139.88 and 163.40cm -1 for the transverse...
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