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In order to increase the stability and practicality of polymer field effect transistor (FET) devices, different manufacturing parameters are investigated, including choice of material, processing solvent, and device geometry. It is found that the performance of the devices is closely related to the choice of gate insulator material, the applied sample configuration and the order of layer deposition...
We have fabricated polymer field-effect transistors (FET) from solution processable polymers. Starting with an inorganic structure using only an organic semiconductor (regio-regular poly(3-hexylthiophene)), the transistor performance was studied as the inorganic materials were replaced with polymeric alternatives one at a time. We see a gradual increase in subthreshold swing and off-currents and an...
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