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Employing a thin AlN film sputter‐deposited on Si substrates, well‐ordered GaN nanocolumn arrays were demonstrated by RF‐plasma‐assisted molecular‐beam‐epitaxy selective‐area growth. Dislocation‐free crystals were grown even on this cost‐effective framework, which included high‐density threading dislocations (>3 × 1011 cm−2), by applying nanocolumn growth techniques. Single‐peak PL spectra from...
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