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We present a study of polar and semi‐polar InGaN/GaN multiple quantum well (MQW) samples. Power density dependent photoluminescence (PL) was conducted on the samples. The polar sample exhibited a large blue shift of 65 nm in the peak PL from low to high power density compared to 10 nm for the semi polar sample. The semi‐polar sample displayed “chevron” shaped surface features. These chevrons were...
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