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Different surface passivation methods of AlGaN/GaN heterostructures were investigated in this work. C‐V measurement shows that very high trap density (Dit) of 1.51×1013cm‐2eV‐1 exists at the AlGaN/GaN surface, which has activation energy of 0.765 eV. The surface treatment by using O2 plasma treatment and HfO2 dielectric can efficiently lower Dit to 3.57×1012cm‐2eV‐1 and 1.06×1012cm‐2eV‐1, repectively...
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