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The device composed of La0.8Bi0.2MnO3/MgO/Co trilayer (with a tunnnel barrier made of MgO film) as an L1-xBixMnO3 substrate are prepared, and the magnetoresistance effect of the device is examined. Fundamental temperature properties of electrical conduction of the La0.8Bi0.2MnO3/MgO/Co trilayer device as a function of MgO thickness is determined. It was found that the magnetoresistance was about 33%...
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