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Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5V and the photoelectric conversion efficiency was increased from 11.87–13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP...
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