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The effect of high-κ (t HfO2 ) and interfacial layer thickness (t IL ) on the low-frequency (LF) drain current noise is studied in n-MOSFETs with HfO 2 gate oxide and TiN metal gate. While a 1/f type spectrum is observed, the dominant noise mechanism is found to be mobility fluctuations. The variation in Hooge’s parameter α H is studied and the results are correlated...
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