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We demonstrate the InGaAsN PIN structures grown by MBE with photoresponse of approximately 1.3 μm and optimized by post growth annealing. The assessment of the annealing study was carried out by comparing the dark current density and photocurrent spectra of the as-grown and annealed samples. The dark current for an optimally annealed InGaAsN PIN is approximately 2 μAcm-2 at an electric field of 100...
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