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Indium tin oxide (ITO) thin films were grown on the (112¯0) surface of sapphire using fast-pulse laser deposition. It was found that when the oxygen pressure was above 2.66 Pa, the growth was epitaxial with the [111] direction perpendicular to the substrate. The epitaxial relation and crystal quality were evaluated by using high-resolution X-ray diffraction, which showed distinct pendellösung oscillations...
Based on the successful growth of hydrogenated nanocrystalline silicon (nc-Si:H) thin films with Si natural quantum dots (NQDs) of 3–6 nm in mean size, we have fabricated nc-Si:H artificial quantum nanodot (AQD) arrays on Si substrates by a low-cost and industrialized plasma-enhanced chemical vapor deposition technique through free-standing ultrathin porous alumina membranes (PAMs). In order to well...
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