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Electric field (E‐field) modulation of perpendicular magnetic anisotropy (PMA) switching, in an energy‐efficient manner, is of great potential to realize magnetoelectric (ME) memories and other ME devices. Voltage control of the spin‐reorientation transition (SRT) that allows the magnetic moment rotating between the out‐of‐plane and the in‐plane direction is thereby crucial. In this work, a remarkable...
Voltage‐controlled perpendicular magnetic anisotropy (PMA) switching is one of the crucial challenges in realizing fast, compact, lightweight devices. In article number 1801639, Ziyao Zhou, Ming Liu, and co‐workers achieve reversible PMA switching with 4 V through ionic‐liquid (IL) gating. The illustration shows the IL‐gating‐induced spin reorientation (SRT), which is promising in new‐generation spintronic...
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