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The integration of TSVs and bonded structures is an important topic in 3D integration. In this study, fine Cu TSVs and various bonded structures, including Cu/Sn micro-bumps, Cu bond pads, and Cu alloy structures, are integrated and demonstrated. Electrical performances, morphology investigations, and reliability investigations of TSVs, bonded bumps/pads, and the integrated structures are studied...
In this study, a wafer-level 3D integration scheme with Cu TSVs based on Cu/Sn micro-bump and BCB adhesive hybrid bonding is demonstrated. To realize the signal transmission effects in high speed digital signaling via Cu TSV and Cu/Sn micro-joint interconnection, the insertion loss was investigated by simulation analysis with variable TSV pitches, micro-bump diameters and chip thicknesses. Key technologies...
A wafer-level 3D integration structure with Cu TSVs based on Cu/Sn micro-bumps and BCB hybrid bonding is demonstrated. Kelvin structure and daisy chain design are adopted for electrical characterization and reliability evaluation. The results indicate the developed 3D integration scheme has excellent reliability and electrical stability.
Tungsten-based full metal gate (FMG) stacks that are equivalent to or better than metal-inserted poly-Si (MIPS) stack have been developed. These fully encapsulated FMG stacks enable borderless source/drain contacts needed for the 14 nm technology node and beyond, where the contacted gate pitch is expected to be less than 80 nm. Tungsten replaces gate salicidation with the sheet resistance ≤ 14 Ω/□...
This study employed simulated annealing (SA) to optimize minimum-cost design of sewer network. A sewer network design which contains significantly varied elevations was used as a case study. The results show that SA is able to achieve least-cost solutions which also fulfill all the constraints of design criteria. Based on the average performance of 200 trials, SA exhibits robustness and efficiency...
In the study, the Ni underlayer plus matt Sn plated IC packaging of PLCC, PDIP and LQFP were subject to lead free (SAC) and SnPb surface mounting and wave soldering, respectively, then followed by TCT (-55degC to 85degC) 1000 cycle, THT (60degC /90%RH) 3000 hrs to investigate whisker growth propensity. The practical whisker performance confirmation on the PCB beyond reflow simulation and component...
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