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The organic compound Rhodamine-101 (Rh101) film on an n-type GaAs substrate with carrier concentration of 7.3×10 15 cm −3 has been formed by means of the evaporation process, and thus Al/Rh101/n-GaAs and Cu/Rh101/n-GaAs contacts have been fabricated. Our aim is to realize a modification of Schottky barrier height (SBH) of the devices using a thin non-polymeric organic compound layer...
The current–voltage (I–V) characteristics of Al/Rhodamine-101/p-Si/Al contacts have been measured at temperatures ranging from 280 to 400K at 20K intervals. A barrier height (BH) value of 0.817eV for the Al/Rh101/p-Si/Al contact was obtained at the room temperature that is significantly larger than the value of 0.58eV of the conventional Al/p-Si Schottky diode. While the barrier height Φ b0 ...
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