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An anthracene film has been deposited on an n-type silicon to fabricate an Au/anthracene/n-Si junction device. The band gap of the anthracene film has been determined from the optical measurement as Eg=1.65eV. After the fabrication of the Au/anthracene/n-Si junction device, temperature dependent capacitance–voltage characteristics in the range of 160–300K were studied to obtain the junction parameters...
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